DSAH00507296.pdf by RF Micro Devices

Partial File Text RFMD® GaN Technology Update Technical Update RFMD® GaN High-Power Transistors Gallium Nitride (GaN) High Power Transistors Features: · High power density of up to 5W/mm · Advanced 0.5m GaN HEMT pr
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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