DSARS009348.pdf by International Rectifier

Partial File Text PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Sho
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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IRGIB10B60KD1P

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C-150

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