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    DSA00288954.pdf by Toshiba

    • MICROWAVE POWER GaAs FET TIM1414-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.5dBm at 14.0GHz to 14.5GHz HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz BROAD BAND
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