DSAE0019995.pdf by Toshiba

Partial File Text 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · Low saturation voltage: VCE (sat) = 0.25 V (typ.) · H
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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