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TOSHIBA
1SV281
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
1 S V 2 8 1
VCO FOR V/ UHF BAND RADIO
Unit in mm
⢠High Capacitance Ratio : Ciy/C4v = 2.0 (TYP.)
⢠Low Ser
