This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
NPT1007 Datasheet
Gallium Nitride 28V, 200W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
· Optimized for narrowband and broadband
