DSASW00135386.pdf

Partial File Text PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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CJD122 CP230 CZT122

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