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    DSASW00135393.pdf

    • PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bondin
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    DSASW00135393.pdf preview

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    CMPT3090L CMXT3090L CP309 CXT3090L CZT3090L
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