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DSASW00135419.pdf
by Central Semiconductor
Partial File Text
PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bondin
Datasheet Type
Original
RoHS
No
Pb Free
No
Lifecycle
Obsolete
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DSASW00135419.pdf
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"Darlington Transistor"
CJD127
CP630
CZT127