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    DSASW00135432.pdf

    • PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAM
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    DSASW00135432.pdf preview

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