This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
PROCESS
CP759R
Small Signal MOSFET
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
9.1 x 9.1 MILS
Die Thickness
3.9 MILS
Gate Bonding Pad Area
2.5 MILS DIAM