DASF0050423.pdf
by Toshiba
- 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 Low forward voltage: VF = 0.23 V (typ.) @IF = 5 m
- Original
- Yes
- Yes
- Active
- Find it at Findchips.com
