DASF0050423.pdf by Toshiba

Partial File Text 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 Low forward voltage: VF = 0.23 V (typ.) @IF = 5 m
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
Price & Stock
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