DSA00174204.pdf by OSRAM

Partial File Text InGaN-High Brightness Lumineszenzdiode (470 nm, High Power) InGaN High Brightness Light Emitting Diode (470 nm, High Power) F 0470B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Fe
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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