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DSA00291591.pdf
by Cree
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PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree's CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers
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162-37
470PF
CGH40025
CGH40025-TB
CGH40025F
CW 7805
cw 7808
STR 6553
str 6708