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    DSASW00201766.pdf by Infineon Technologies

    • Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 ­ 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond
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