This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
3QE » â 712^537 QQ3G1Sà 7
SGS-THOMSON s e S-thojson
IRF151 CHIP
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM
DIE SIZE: 221 x221 mils METALLIZATION:
Top Al
Back Au/Cr/Ni
