DSAAQ0034433.pdf by Micron Technology

Partial File Text 0.16µm Process ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDRTM SRAM 2-WORD BURST Features · 9Mb Density (512K x 18) · Separate independent read and write data ports with concurrent t
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