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    DSAEDA00031905.pdf by Zetex Semiconductors

    • ZXM N3B04N8 30V N-CHANNEL ENHANCEM ENT M ODE M OSFET 2.5V GATE DRIVE SUM M ARY V (BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench M OSFETs from Zetex utilizes a
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