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DSASW00214399.pdf
by IXYS
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DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 1000 VDGR TJ = 25°C to 150
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102N20
DE475-102N20A