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DSAIHSC00018970.pdf
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MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2430A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 3 0 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in
Datasheet Type
Scan
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Obsolete
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