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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A M ICRO W AVE POW ER GaAs FE T DESCRIPTION T he M G F 2 4 0 7 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r u
Datasheet Type Scan
RoHS Yes
Pb Free Unknown
Lifecycle Active

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