DSA00150968.pdf by Unisonic Technologies

Partial File Text UTC 2SA1797 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *Low saturation voltage. VCE (sat)=-0.35V(Max) at IC / IB=-1A / -50mA *Excellent DC current gain characteristics 1
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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