DSA0018625.pdf by Harris Semiconductor

Partial File Text Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson A
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8602 RECTIFIER AN8602 applications of mos controlled thyristor ED-26 diode ED26 diode fet 600V 20A ford igbt MOS Controlled Thyristor mos Turn-off Thyristor MOS-Gated Thyristor mosfet controlled thyristor mosfet, igbt, transistor MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS P channel 600v 20a IGBT P channel 600v 30a IGBT Pelly thyristor rca