DSA00300982.pdf by Hitachi Semiconductor

Partial File Text HE8404SG GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wid
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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