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DSA0090341.pdf
by California Eastern Laboratories
Partial File Text
NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M16 FEATURES · HIGH GAIN BANDWIDTH: fT = 25 GHz · LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz · HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GH
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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2SC5704
NE662M16
NE662M16-T3-A
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