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    • M ic r o w a v e T e c h n o l o g y 18 GHz High Power GaAs FET MwT-9 r,!i 6/ +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MI
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