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Partial File Text M ic r o w ave T echno lo g y 18 GHz High Power GaAs FET MwT-9 ri +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE
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