DSAIHSC000502.pdf by Not Available

Partial File Text High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1M x 1 6 CMOS EDO DRAM Preliminary information Features â¢ 1024 refresh cydes, 16 ms refresh interval â¢ Organization: 1,048,576 word
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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