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    • Silicon Transistor 2SD1697 gt O'bMftMZ&b, 800 mAt T-iOf^hFE^M v ? h YyAT vmtTto (r-u > h oi&vCE(,»t)-e-t„ (Ta = 25 °C) fl^® : mm) M S fe VcBO 100 V VcEO 80 V Vebo 8.0 V IC(D
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