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DSAEDA00039000.pdf
by Fairchild Semiconductor
Partial File Text
FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 m: Features General Description  Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairc
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Transferred
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