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 Compound Transistor BAI F4N » o T xifit/t ^ 1*1/1 L T ^ & i"o (Ri = 22 kQ, R2 = 47 kQ) : mm)* o BN1F4N t ^ > -7° ij / > ^ 'J T-^ffl fèit. M 0 5e fé r, u ^ 9 . VcBO 60 V n V 9
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