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    • =t—5> • S/—h Compound Transistor FIMI A3Q Î&tftft IcPNPn: «J □ > h^ n m o 7 xffii; 1*1 il IX ^ £ tc (Ri = 1.0 k£2, R2 = 10 kQ) O—VvV R oFA1A3Q t =r >-/')/> f) tt, (Ta = 25 °
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