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    DSAEDA00039280.pdf by Fairchild Semiconductor

    • FDMS7678 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairch
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