DSAEDA00039308.pdf by Fairchild Semiconductor

Partial File Text FDMS8622 N-Channel Power TrenchÂ® MOSFET 100 V, 16.5 A, 56 mÎ© Features General Description Ì Max rDS(on) = 56 mÎ© at VGS = 10 V, ID = 4.8 A Ì High performance trench technology for extrem
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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