DSAE0028263.pdf by Freescale Semiconductor

Partial File Text Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or U
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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