DSA0010837.pdf by Stanson Technology

Partial File Text STN6561 STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DM
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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CA SOT 25 IDM-10 marking 6l N -Channel power Sot 6 SOT-23-6L SOT23-6L ST2300 STN6561

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