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DSARS0037136.pdf
by Toshiba
Partial File Text
1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR
Datasheet Type
Original
RoHS
Yes
Pb Free
No
Lifecycle
Active
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DSARS0037136.pdf
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