DSARS0037142.pdf
by Toshiba
- 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute
- Original
- Yes
- No
- Active
- Find it at Findchips.com
