DSA0096097.pdf by Toshiba

Partial File Text TOSHIBA TIM1112-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz · High gain - G1dB = 7.5 dB at 11.7
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSA0096097.pdf preview

Download Datasheet

User Tagged Keywords

Price & Stock Powered by