DSA0096240.pdf by Toshiba

Partial File Text TOSHIBA TIM5359-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 42.5 dBm at 5.3 GHz to 5.9 GHz · High gain - G1dB = 7.5 dB at 5.3 GHz t
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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