DSA0096308.pdf by Toshiba

Partial File Text TOSHIBA TIM6472-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carri
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TIM5964-4L TIM6472-4L

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