DSASW0012232.pdf by Chino-Excel Technology

Partial File Text CES2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 2.8A, RDS(ON) = 65m (typ) @VGS = 10V. RDS(ON) = 90m (typ) @VGS = 4.5V. High dense cell design for extremely low RDS(ON).
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