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    DSASW0012240.pdf by Chino-Excel Technology

    • CES2313A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55m @VGS = -10V. RDS(ON) = 86m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugge
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