DSASW0012324.pdf by Chino-Excel Technology

Partial File Text CEP65A3/CEB65A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 45A,RDS(ON) = 12m @VGS = 10V. RDS(ON) = 18m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).
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