DSAHI00055743.pdf by Fairchild Semiconductor

Partial File Text ISL9R860P2, ISL9R860S3ST 8 A, 600 V, StealthTM Diode March 2001 ISL9R860P2, ISL9R860S3ST Features · Stealth Recovery trr = 28 ns (@ IF = 8 A) · Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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ISL9R860P2 MOSFET 3N 200 r860p2 R860S3S TO254P1524X482 TO254P1524X482-3N