DSA0098303.pdf by Fairchild Semiconductor

Partial File Text TM QFET FQD3N60C 600V N-Channel MOSFET Features Description · 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using F
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FQD3N60C FQD3N60CTF FQD3N60CTM