DSA0040154.pdf

Partial File Text GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz · LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm · ION IM
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