DSA0040183.pdf

Partial File Text PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 · HIGH fT: 16 GHz
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IS21E NE699M01 NE699M01-T1 RF NPN POWER TRANSISTOR C 10-12 GHZ