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DSA0040550.pdf
by National Semiconductor
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ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no
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AN-1009
AN-1009 national
C1996
CS100
CS160
NM93C46
NM93C46N
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