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    Part Img VNQ810MTR-E datasheet by STMicroelectronics

    • IC MOSFET DRVR 600A 12 HI SIDE NON-INV 28SO-28 T/R
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • 8542.39.00.01
    • 8542.39.00.00
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    VNQ810MTR-E datasheet preview

    VNQ810MTR-E Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN4899, which includes guidelines for component placement, thermal management, and routing to minimize electromagnetic interference (EMI) and ensure reliable operation.
    • The input capacitor values depend on the specific application and operating conditions. A general guideline is to use capacitors with a value between 10nF to 100nF, with a voltage rating of at least 50V. Refer to the application note AN4899 for more detailed guidance on input capacitor selection.
    • The maximum allowed voltage drop across the VNQ810MTR-E is 1.5V. Exceeding this voltage drop may affect the device's reliability and performance. Ensure that the input voltage is within the recommended range to maintain a safe operating margin.
    • To ensure EMC, follow the guidelines in the application note AN4899, which includes recommendations for PCB layout, component selection, and shielding. Additionally, consider using a metal shield or a shielded enclosure to minimize radiated emissions.
    • The thermal resistance of the VNQ810MTR-E package is typically around 20-30°C/W. This value can vary depending on the specific application and operating conditions. Ensure proper thermal management by providing adequate heat sinking and airflow to prevent overheating.
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